SB10H150CT-1

Features: `Guardring for overvoltage protection`Low power loss, high efficiency`Low forward voltage drop`High frequency operation`Solder dip 260, 40 second`Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECSpecifications PARAMETER SYMBOL MBR10H150CT UNIT Maximum rep...

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SeekIC No. : 004484463 Detail

SB10H150CT-1: Features: `Guardring for overvoltage protection`Low power loss, high efficiency`Low forward voltage drop`High frequency operation`Solder dip 260, 40 second`Component in accordance to RoHS 2002/95/EC...

floor Price/Ceiling Price

Part Number:
SB10H150CT-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

`Guardring for overvoltage protection
`Low power loss, high efficiency
`Low forward voltage drop
`High frequency operation
`Solder dip 260, 40 second
`Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC





Specifications

PARAMETER
SYMBOL
MBR10H150CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current(see Fig.1)Total device
per diode
IF(AV)
10
5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
160
A
Peak repetitive reverse current per diode at tp= 2s,1kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20s waveform)
ERSM
10
mJ
Non-repetitive avalanche energy per diode at 25, IAS=1.5A, L=10mH
EAS
11.25
mJ
Voltage rate of change (rated VR )
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ , TSTG
-65 to +175
Isolation voltage (ITO-220AB only)
From terminals to heatsink t =1minute
VAC
1500
V





Description

MBR10H150CT, MBRF10H150CT, SB10H150CT-1 datasheet




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