Features: `Guardring for overvoltage protection`Low power loss, high efficiency`Low forward voltage drop`High frequency operation`Solder dip 260, 40 second`Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECSpecifications PARAMETER SYMBOL MBR10H150CT UNIT Maximum rep...
SB10H150CT-1: Features: `Guardring for overvoltage protection`Low power loss, high efficiency`Low forward voltage drop`High frequency operation`Solder dip 260, 40 second`Component in accordance to RoHS 2002/95/EC...
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| PARAMETER |
SYMBOL |
MBR10H150CT |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
150 |
V |
| Working peak reverse voltage |
VRWM |
150 |
V |
| Maximum DC blocking voltage |
VDC |
150 |
V |
| Maximum average forward rectified current(see Fig.1)Total device per diode |
IF(AV) |
10 5 |
A |
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
160 |
A |
| Peak repetitive reverse current per diode at tp= 2s,1kHz |
IRRM |
1.0 |
A |
| Peak non-repetitive reverse surge energy per diode (8/20s waveform) |
ERSM |
10 |
mJ |
| Non-repetitive avalanche energy per diode at 25, IAS=1.5A, L=10mH |
EAS |
11.25 |
mJ |
| Voltage rate of change (rated VR ) |
dv/dt |
10000 |
V/s |
| Operating junction and storage temperature range |
TJ , TSTG |
-65 to +175 |
|
| Isolation voltage (ITO-220AB only) From terminals to heatsink t =1minute |
VAC |
1500 |
V |