SB230-TB

DescriptionFeatures of the SB230-TB are:(1)schottky barrier chip;(2)guard ring die construction for transient protection;(3)high current capability;(4)loe power loss,high efficiency;(5)high surge current capability;(6)for use in low voltage,high frequency inverters,free wheeling.and polarity prote...

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SeekIC No. : 004484605 Detail

SB230-TB: DescriptionFeatures of the SB230-TB are:(1)schottky barrier chip;(2)guard ring die construction for transient protection;(3)high current capability;(4)loe power loss,high efficiency;(5)high surge cu...

floor Price/Ceiling Price

Part Number:
SB230-TB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/12/26

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Product Details

Description



Description

Features of the SB230-TB are:(1)schottky barrier chip;(2)guard ring die construction for transient protection;(3)high current capability;(4)loe power loss,high efficiency;(5)high surge current capability;(6)for use in low voltage,high frequency inverters,free wheeling.and polarity protection applications.

Mechanical data of the SB230-TB are:(1)case:molded plastic;(2)terminals:plated leads solderable per MIL-STD-202,method 208;(3)polarity:cathode band;(4)weight:0.40 grams(approx);(5)mounting position is any;(6)marking:type number.

The absolute maximum ratings of the SB230-TB can be summarized as:(1):the characteristic is peak repetitive voltage,the symbol is VRRM,the rating is 30,the unit is V;(2):the characteristic is working peak repetitive voltage,the symbol is VRWM,the rating is 30,the unit is V;(3):the characteristic is DC blocking voltage,the symbol is VR,the rating is 30,the unit is V;(4):the characteristic is RMS reverse voltage,the symbol is VR(RMS),the rating is 21,the unit is V;(5):the characteristic is average rectified output current,the symbol is IO,the rating is 2.0,the unit is A;(6):the characteristic is non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method),the symbol is IFSM,the rating is 50,the unit is A;(7):the characteristic is peak reverse current @ TA=25,the symbol is IRM,the rating is 0.5,the unit is mA;(8):the characteristic isat rated DC blocking voltage @ TA=100,the symbol is IRM,the rating is 10,the unit is mA;(9):the characteristic is typical junction capacitance,the symbol is Cj,the rating is 170,the unit is pF;(10):the characteristic is typical thermal resistance junction to lead,the symbol is RJL,the rating is 15,the unit is k/W;(11):the characteristic is typical thermal resistance junction to ambient,the symbol is RJA,the rating is 50,the unit is k/W;(12):the characteristic is operating and storage temperature range,the symbol is Tj,Tstg,the rating is -65 to +150,the unit is .




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