SB411D

Description

The SB411D is a kind of silicon epitaxial planar schottky barrier diode which is for low power rectification and switching power supply. If you want to know more about this device, please go to our website for the detail imformation. The characteristics at Ta = 25°C of SB411D can be summarized as (1)forward voltage at IF = 10mA/ at IF = 500mA VF: 0.3/ 0.5 V; (2)reverse current at V R =10V IR: 30 A; (3)capacitance between terminals at V R =10V, f=1MHz CT: 20pF.

The absolute maximum ratings of SB411D are (1)small surface mounting type; (2)high reliability.

The absolute maximum ratings of SB411D are (1)peak reverse voltage VRM: 40 V; (2)DC reverse voltage VR: 20 V; (3)Mean Rectifying Current Io: 0.5 A; (4)peak forward surge current 1) I FSM: 3 A; (5)junction temperature T j: 125 °C; (6)storage temperature range T s: -40 to +125 °C.