SB550-T3

Features of the SB550-T3 are:(1)schottky barrier chip;(2)guard ring die construction for transient protection;(3)high current capability;(4)loe power loss,high efficiency;(5)high surge current capability;(6)for use in low voltage,high frequency inverters,free wheeling.and polarity protection applications.

Mechanical data of the SB550-T3 are:(1)case:molded plastic;(2)terminals:plated leads solderable per MIL-STD-202,method 208;(3)polarity:cathode band;(4)weight:1.2 grams(approx);(5)mounting position is any;(6)marking:type number.

The absolute maximum ratings of the SB550-T3 can be summarized as:(1):the characteristic is peak repetitive voltage,the symbol is VRRM,the rating is 50,the unit is V;(2):the characteristic is working peak repetitive voltage,the symbol is VRWM,the rating is 50,the unit is V;(3):the characteristic is DC blocking voltage,the symbol is VR,the rating is 50,the unit is V;(4):the characteristic is RMS reverse voltage,the symbol is VR(RMS),the rating is 35,the unit is V;(5):the characteristic is average rectified output current,the symbol is IO,the rating is 5.0,the unit is A;(6):the characteristic is non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method),the symbol is IFSM,the rating is 150,the unit is A;(7):the characteristic is peak reverse current @ TA=25,the symbol is IRM,the rating is 0.5,the unit is mA;(8):the characteristic isat rated DC blocking voltage @ TA=100,the symbol is IRM,the rating is 50,the unit is mA;(9):the characteristic is typical junction capacitance,the symbol is Cj,the rating is 400,the unit is pF;(10):the characteristic is forward voltage,the symbol is VFM,the rating is 0.70,the unit is k/W;(11):the characteristic is typical thermal resistance junction to ambient,the symbol is RJA,the rating is 10,the unit is k/W;(12):the characteristic is operating and storage temperature range,the symbol is Tj,Tstg,the rating is -65 to +150,the unit is .