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SBT103D

Features: Low forward voltage drop(VF)Low reverse leakage current (IR)Very small conduction power lossVery small switching power lossVery high switching speedVery high reliabilitySpecifications Characteristic Symbol SBT103AD SBT103BD SBT103CD Unit Peak Repetitive Reverse Vol...

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SBT103D: Features: Low forward voltage drop(VF)Low reverse leakage current (IR)Very small conduction power lossVery small switching power lossVery high switching speedVery high reliabilitySpecifications ...

SBT103D Data Sheet

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Part Number:
SBT103D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability


Specifications

Characteristic
Symbol
SBT103AD
SBT103BD
SBT103CD
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
30
20
V
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current
IFM
350
mA
Repetitive Peak Forward Current
@t1.0s
IFRM
1.0
A
Non-Repetitive Peak Forward Surge
Current 8.3ms Half Sine Wave
IFSM
15
mA
A
Power Dissipation
Pd
400
mW
Thermal Resistance, Junction to
Ambient Air
RJA
300
°C/W
Operating Temperature Range
Tj
125
°C
Storage Temperature Range
TSTG
-55 to +125
°C



Description

SBT103D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders.




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