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SBT350-10L

DIODE SCHOTTKY 100V 35A TO-3PB

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SeekIC No. : 003426906 Detail

SBT350-10L: DIODE SCHOTTKY 100V 35A TO-3PB

SBT350-10L Data Sheet

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Part Number:
SBT350-10L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Voltage - Forward (Vf) (Max) @ If: 800mV @ 14A Current - Reverse Leakage @ Vr: 500µA @ 50V
Current - Average Rectified (Io) (per Diode): 35A Voltage - DC Reverse (Vr) (Max): 100V
Reverse Recovery Time (trr): - Gate-Source Breakdown Voltage : - 3 V to 0.5 V
Diode Type: Schottky Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode Mounting Type: Through Hole, Radial
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PB    

Description

Series: -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Reverse Recovery Time (trr): -
Current - Average Rectified (Io) (per Diode): 35A
Mounting Type: Through Hole, Radial
Package / Case: TO-3P-3, SC-65-3
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Current - Reverse Leakage @ Vr: 500µA @ 50V
Voltage - Forward (Vf) (Max) @ If: 800mV @ 14A
Supplier Device Package: TO-3PB
Packaging: Tray


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Specifications

Absolute maximum ratings
VRRM [V]100
IO [A]35
IFSM [A]160
Electrical characteristics
VF max [V]0.8
IF [A]14
Tj [°C]25
IR max [µA]500
VR [V]50
Tj [°C]25
trr max [ns]-
IF [A]-
Tj [°C]-
Rthj-c max [°C/W]1.2



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