DescriptionThe SC12-600-100 is designed as one member of the SC12 series which are silicon controlled recitifiers.SC12-600-100 has five features. (1)12A continuous on-state current. (2)100A surge-current. (3)Glass passivated wafer. (4)400V to 800V off-state voltage. (5)Max Igt of 20mA. Those are a...
SC12-600-100: DescriptionThe SC12-600-100 is designed as one member of the SC12 series which are silicon controlled recitifiers.SC12-600-100 has five features. (1)12A continuous on-state current. (2)100A surge-cu...
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The SC12-600-100 is designed as one member of the SC12 series which are silicon controlled recitifiers.
SC12-600-100 has five features. (1)12A continuous on-state current. (2)100A surge-current. (3)Glass passivated wafer. (4)400V to 800V off-state voltage. (5)Max Igt of 20mA. Those are all the main features.
Some absolute maximum ratings of SC12-600-100 have been concluded into several points as follow. (1)Its repetitive peak off-state voltage would be 600V. (2)Its repetitive peak reverse voltage would be 600V. (3)Its continuous on-state current at (or bellow) 70°C case temperature would be 12A. (4)Its average on-state current (180° conduction angle) at (or below) 70°C case temperature would be 7.5A. (5)Its surge on-state current at (or below) 25°C case temperature would be 100A. (6)Its peak positive gate current (pulse width <=300us) would be 3A. (7)Its peak gate power dissipation (pulse width<=300us) would be 5W. (8)Its average gate power dissipation would be 1W. (9)Its operating case temperature range would be from -40°C to 110°C. (10)Its storage temperature range would be from -40°C to 125°C. (11)Its lead temperature 1.6mm from case for 10 seconds would be 230°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of SC12-600-100 are concluded as follow. (1)Its repetitive peak off-state current would be max 2mA. (2)Its repetitive peak reverse current would be max 2mA. (3)Its gate trigger current would be typ 8mA and max 20mA. (4)Its gate trigger voltage would be typ 0.8V and max 1.5V. (5)Its holding current would be max 40mA. (6)Its on-state voltage would be max 1.4V. (7)Its critical rate of rise of off-state voltage would be typ 400V/us. (8)Its junction to case thermal resistance would be max 2.4°C/W. (9)Its junction to free air thermal resistance would be max 62.5°C/W. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!