SD1012-3

The SD1012-3 is a 12.5V epitaxial silicon NPN planar transistor designed primanly for communications.Features of the SD1012-3 are:(1)frequency is 175MHz;(2)power out is 6W;(3)power gain is 9dB;(4)FM class C transistor;(5)voltage is 12.5V;(6)efficiency is 50%;(7)common emitter.

The absolute maximum ratings of the SD1012-3 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 36.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 18.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 36.0,the unit is V;(5):the symbol is IC,the parameter is collector current(max.),the value is 1.8,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation ,the value is 20.0,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1012-3 can be summarized as:(1):the symbol is BVCEO,the test conditions is IC=10mA,IB=0,the value is 18.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=1mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCES,the test conditions is IC=5mA,VBE=0,the value is 36.0,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=15.0V,IE=0,the value is 1.0,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=25A,the value is 5.0.