SD1013-03

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging : Tray


Pinout




Description

The SD1013-03 is designed as one kind of RF & microwave transistor device that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handing capability, high power gain. And this device can be used in 108 to 152 MHz FM mobile applications.

Features of the SD1013-03 are:(1)class C transistor;(2)frequency: 150 MHz;(3)voltage: 28.0 V;(4)power out: 10 W;(5)power gain: 10.0 dB;(6)common emitter;(7)gold metallization. The absolute maximum ratings of this device can be summarized as:(1)collector-base voltage: 65.0 V;(2)collector-emitter voltage: 35.0 V;(3)emitter-base voltage: 4.0 V;(4)collector current: 1.0 A;(5)storage temperature: -65 to +150 ;(6)junction temperature: +200 . If you want to know more information such as the electrical characteristics about the SD1013-03, please download the datasheet in www.seekic.com or www.chinaicmart.com.