SD1018-6

The SD1018-6 is an epitaxial silicon NPN planar transistor.Features of the SD1018-6 are:(1)FM class C transistor;(2)frequency is 175MHz;(3)voltage is 12.5V;(4)power out is 40W;(5)power gain is 4.5dB;(6)efficiency is 70%;(7)common emitter.

The absolute maximum ratings of the SD1018-6 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 36.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 18.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 36.0,the unit is V;(5):the symbol is IC,the parameter is collector current(max.),the value is 6.0,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 80.0,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1018-6 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=100mA,IB=0,the value is 18.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCES,the test conditions is IC=20mA,VBE=0,the value is 36.0,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=15.0V,IE=0,the value is 2.5,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=1A,the value is 5.0.