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SD1080S

Features: Schottky Barrier ChipGuard Ring Die Construction for Transient ProtectionHigh Current CapabilityLow Power Loss, High EfficiencyHigh Surge Current Capability For Use in Low Voltage, High Frequenc Inverters, Free Wheeling, and PolarityProtection Applications Specifications Characteri...

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SeekIC No. : 004486286 Detail

SD1080S: Features: Schottky Barrier ChipGuard Ring Die Construction for Transient ProtectionHigh Current CapabilityLow Power Loss, High EfficiencyHigh Surge Current Capability For Use in Low Voltage, High F...

SD1080S Data Sheet

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Part Number:
SD1080S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequenc Inverters, Free Wheeling, and PolarityProtection Applications




Specifications

Characteristic
Symbol
SD
1020YS
SD
1030YS
SD
1040YS
SD
1050YS
SD
1060YS
SD
1080YS
SD
10100YS
Unit
Peak Repetitive Reverse Voltag Working Peak Reverse Voltage DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
80
100
V
RMS Reverse Voltage
VR(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current@TL = 100
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine- wave superimposed on rated load (JEDEC Method)
IFSM
100
A

Forward Voltage (Note 1) @IF = 10A
VFM
0.55
0.75
0.85
V
Peak Reverse Current @TA= 25
At Rated DC Blocking Voltage@TA= 100
IRM
0.2
50
mA

Typical Junction Capacitance (Note 2)
Cj
600
pF

Typical Thermal Resistance Junction to Ambient
RJA
60
K/W

Operating Temperature Range
Tj
-50 to +125

Storage Temperature Range
TSTG
-50 to +150





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