SD1106

The SD1106 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)high-speed pulse amplifiers; (2)logic buffers; (3)line drivers; (4)solid-state relays.

Features of the SD1106 are:(1)inherent current sharing capability whrn paralleled; (2)simple straight-forward DC biasing; (3)extended safe operating area; (4)inherently temperature stable - output current devreases as temperature increases.

The absolute maximum ratings of the SD1106 can be summarized as:(1)drain source voltage: 60 V;(2)gate-source voltage: +/-40 V;(3)peak pulsed drain current: 2.0 A;(4)linear derating factor: 5.3 mW/ or 8.0 mW/;(5)operating junction and storage temperature range: -55 to +150 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +260 . If you want to know more information about the SD1106, please download the datasheet in www.seekic.com or www.chinaicmart.com .