Application450 - 512 MHz12.5 VOLTSEFFICIENCY 55%COMMON EMITTERPOUT = 2.0 W MIN. WITH 10.0 dB GAINPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 16 V VCES Collector-Emitter Voltage ...
SD1134: Application450 - 512 MHz12.5 VOLTSEFFICIENCY 55%COMMON EMITTERPOUT = 2.0 W MIN. WITH 10.0 dB GAINPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
36 |
V |
|
VCEO |
Collector-Emitter Voltage |
16 |
V |
|
VCES |
Collector-Emitter Voltage |
36 |
V |
|
VEBO |
Emitter-Base Voltage |
4.0 |
V |
|
IC |
Device Current |
0.75 |
A |
|
PDISS |
Power Dissipation |
5 |
W |
|
TJ |
Junction Temperature |
+200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization
to achieve infinite VSWR at rated operating conditions.