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SD1135

Application470 MHz12.5 VOLTSEFFICIENCY 60%COMMON EMITTERPOUT = 5.0 W MIN. WITH 8.5 dB GAINPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCER Collector-Emitter Voltage 18 V VCES Collector-Emitter Voltage 36 ...

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SeekIC No. : 004486307 Detail

SD1135: Application470 MHz12.5 VOLTSEFFICIENCY 60%COMMON EMITTERPOUT = 5.0 W MIN. WITH 8.5 dB GAINPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 ...

SD1135 Data Sheet

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Part Number:
SD1135
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

470 MHz
12.5 VOLTS
EFFICIENCY 60%
COMMON EMITTER
POUT = 5.0 W MIN. WITH 8.5 dB GAIN


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

36

V

VCER

Collector-Emitter Voltage

18

V

VCES

Collector-Emitter Voltage

36

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

2.0

A

PDISS

Power Dissipation

37

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

- 65 to +150

°C




Description

The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.




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