SD1224-2

DescriptionThe SD1224-2 is an epitaxial silicon NPN planar transistor.Features of the SD1224-2 are:(1)FM class C transistor;(2)frequency is 175MHz;(3)voltage is 28V;(4)power out is 40W;(5)power gain is 7.6dB;(6)efficiency is 60%;(7)common emitter. The absolute maximum ratings of the SD1224-2 can ...

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SeekIC No. : 004486320 Detail

SD1224-2: DescriptionThe SD1224-2 is an epitaxial silicon NPN planar transistor.Features of the SD1224-2 are:(1)FM class C transistor;(2)frequency is 175MHz;(3)voltage is 28V;(4)power out is 40W;(5)power gain...

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Part Number:
SD1224-2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Description

The SD1224-2 is an epitaxial silicon NPN planar transistor.Features of the SD1224-2 are:(1)FM class C transistor;(2)frequency is 175MHz;(3)voltage is 28V;(4)power out is 40W;(5)power gain is 7.6dB;(6)efficiency is 60%;(7)common emitter.

The absolute maximum ratings of the SD1224-2 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 65.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 35.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 65,the unit is V;(5)::the symbol is IC,the parameter is collector current(max.),the value is 5.0,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 60.0,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1224-2 can be summarized as:(1):the symbol is BVCES,the test conditions is IC=200mA,VBE=0,the value is 65.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCEO,the test conditions is IC=200mA,IB=0,the value is 35.0,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=30.0V,IE=0,the value is 1,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=500mA,the value is 5.0. 




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