SD1272-02

The SD1272-02 is designed as one kind of RF & microwave transistor device that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handing capability, high power gain. And this device can be used in 130 to 230 MHz FM mobile applications.

Features of the SD1272-02 are:(1)class C transistor;(2)frequency: 175 MHz;(3)voltage: 12.5 V;(4)power out: 25 W;(5)power gain: 9.2 dB;(6)common emitter. The absolute maximum ratings of the SD1272-02 can be summarized as:(1)collector-base voltage: 36.0 V;(2)collector-emitter voltage: 18.0 V;(3)emitter-base voltage: 4.0 V;(4)collector current: 4.0 A;(5)storage temperature: -65 to +150 ;(6)junction temperature: +200 . If you want to know more information such as the electrical characteristics about the SD1272-02, please download the datasheet in www.seekic.com or www.chinaicmart.com.