Transistors RF Bipolar Power RF Transistor
SD1275-01: Transistors RF Bipolar Power RF Transistor
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| Packaging : | Tray |

|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
36 |
V |
|
VCEO |
Collector-Emitter Voltage |
16 |
V |
|
VCES |
Collector-Emitter Voltage |
36 |
V |
|
VEBO |
Emitter-Base Voltage |
4.0 |
V |
|
IC |
Device Current |
8.0 |
A |
|
PDISS |
Power Dissipation |
70 |
W |
|
TJ |
Junction Temperature |
+200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
The SD1275-01 is a13.6 VClass C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
| Technical/Catalog Information | SD1275-01 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Current - Collector (Ic) (Max) | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 250mA, 5V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| Gain | 9dB |
| Power - Max | 70W |
| Compression Point (P1dB) | - |
| Package / Case | M113 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SD1275 01 SD127501 497 5456 ND 4975456ND 497-5456 |