RF Amplifier RF Bipolar Trans
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|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
36 |
V |
|
VCEO |
Collector-Emitter Voltage |
18 |
V |
|
VEBO |
Emitter-Base Voltage |
4.0 |
V |
|
IC |
Device Current |
4.5 |
A |
|
PDISS |
Power Dissipation |
80 |
W |
|
TJ |
Junction Temperature |
+200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.