Features: The SD1332 is an all gold metallized NPN silicon transistor featuring high gain and very low noise.Features of the SD1332 are:(1)high FT-5.5GHz;(2)very low noise;(3)all gold metallized;(4)hermetic pacvkage.
The absolute maximum ratings of the SD1332 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 20.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 15.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.0,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 30.0,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 180,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .
The electrical characteristics of the SD1332 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=10A,the value is 20,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10A,the value is 2,the unit is V;(3):the symbol is BVCEO,the test conditions is IC=1.0mA,VBE=0,the value is 15,the unit is V;(4):the symbol is ICEO,the test conditions is VCE=10V,IB=0,the value is 10.0,the unit is nA;(5):the symbol is hFE,the test conditions is VCE=10V,IC=14mA,the Min is 50,the Max is 300.
DescriptionThe SD1332 is an all gold metallized NPN silicon transistor featuring high gain and very low noise.Features of the SD1332 are:(1)high FT-5.5GHz;(2)very low noise;(3)all gold metallized;(4)hermetic pacvkage.
The absolute maximum ratings of the SD1332 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 20.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 15.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.0,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 30.0,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 180,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .
The electrical characteristics of the SD1332 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=10A,the value is 20,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10A,the value is 2,the unit is V;(3):the symbol is BVCEO,the test conditions is IC=1.0mA,VBE=0,the value is 15,the unit is V;(4):the symbol is ICEO,the test conditions is VCE=10V,IB=0,the value is 10.0,the unit is nA;(5):the symbol is hFE,the test conditions is VCE=10V,IC=14mA,the Min is 50,the Max is 300.
SD1332 Data Sheet
