Transistors RF Bipolar Power NPN 12.5V 30MHz
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| Configuration : | Single Dual Source | Collector- Emitter Voltage VCEO Max : | 18 V | ||
| Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 20 A | ||
| Maximum DC Collector Current : | 20 A | Power Dissipation : | 270 W | ||
| Package / Case : | M174 | Packaging : | Bulk |

|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
36 |
V |
|
VCEO |
Collector-Emitter Voltage |
18 |
V |
|
VEBO |
Emitter-Base Voltage |
4.0 |
V |
|
IC |
Device Current |
20 |
A |
|
PDISS |
Power Dissipation |
270 |
W |
|
TJ |
Junction Temperature |
+200 |
°C |
|
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions.
| Technical/Catalog Information | SD1405 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Current - Collector (Ic) (Max) | 20A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| Gain | 13dB |
| Power - Max | 270W |
| Compression Point (P1dB) | - |
| Package / Case | M174 |
| Packaging | Bulk |
| Drawing Number | * |
| Mounting Type | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SD1405 SD1405 497 5457 ND 4975457ND 497-5457 |