SD1512

The SD1512 is a gold metallized silicon NPN planar pulsed transistor that has been designed for use in extended pulse width and duty cycle applications from 960 to 1220MHz.

Features of the SD1512 are:(1)designed for use in long pulse L-band applications like radar,jtids,etc;(2)extremely rugged;(3)gold metallization;(4)thermally stable;(5)capable of operation AT400s and 20%.

The absolute maximum ratings of the SD1512 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 65.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 30.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 2.0,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 53.0,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1512 can be summarized as:(1):the symbol is BVCEO,the test conditions is IC=10mA,IB=0,the value is 30.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCES,the test conditions is IC=25mA,VBE=0,the value is 65.0,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=28.0V,IE=0,the value is 5.0,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5V,IC=100.0mA,the min is 20.