SD1520-8

The SD1520-8 is a gold metallized,silicon NPN pulsed power transistor.Features of the SD1520-8 are:(1)designed for pulse power IFF,DME,TACAN;(2)0.25 WATT(typ) IFF 1030 to 1090MHz;(3)0.20 WATT(min) DME 1025 to 1150MHz;(4)0.15 WATT(typ) TACAN 960 to 1215MHz;(5)greater than 9.5dB gain;(6)refractory gold metallization;(7)emitter ballasting and low thermal resistance for reliability and ruggedness;(8)infinite load-vswr capability at specific operating conditions;(9)input matched,common emitter.

The absolute maximum ratings of the SD1520-8 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 50.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 20.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 0.25,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 5.8,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1520-8 can be summarized as:(1):the symbol is BVCEO,the test conditions is IC=5mA,IB=0,the value is 20.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=1mA,IC=0,the value is 3.5,the unit is V;(3):the symbol is BVCES,the test conditions is IC=1mA,VBE=0,the value is 50.0,the unit is V;(4):the symbol is ICES,the test conditions is VCB=28.0V,VBE=0,the value is 1.0,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=100mA,the typ is 55.0.