SD1522-3

DescriptionThe Sd1522-3 is a gold metalized, silicon NPN power transistor. It is designed for applications requiring peak power and duty cycles such as IFF, DME, TACAN. It is packaged in the 280 input matched stripline package resulting in improved broadband performance and a low thermal resistanc...

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SeekIC No. : 004486368 Detail

SD1522-3: DescriptionThe Sd1522-3 is a gold metalized, silicon NPN power transistor. It is designed for applications requiring peak power and duty cycles such as IFF, DME, TACAN. It is packaged in the 280 inp...

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Part Number:
SD1522-3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Description

The Sd1522-3 is a gold metalized, silicon NPN power transistor. It is designed for applications requiring peak power and duty cycles such as IFF, DME, TACAN. It is packaged in the 280 input matched stripline package resulting in improved broadband performance and a low thermal resistance. The features of TUA 6110XS are as follows: (1)designed for pulse power IFF, DME, TACAN; (2)1.7WATT IFF 1030-1090MHz; (3)1.5WATT DME 1025-1150MHz; (4)1.25WATT TACAN 960-1215MHz; (5)emitter ballasting and low thermal resistance for reliability and ruggedness; (6)infinite load-vswr capability at specified operating conditions; (7)input matched, common base configuration.

What comes next is about the maximum ratings of SD1522-3: (1)collector-base voltage: 45.0V; (2)collector-emitter voltage: 45.0V; (3)emitter-base voltage: 3.5V; (4)collector current: 0.5A; (5)total device dissipation at + 25: 8.0W; (6)storage temperature: -65 to +150; (7)junction temperature: +200.

The following is about the electrical characteristics of SD1522-3: (1)BVCBO: 45.0V min at IC = 10mA, IB = 0; (2)BVCES: 45.0V min at IC = 25mA, VBE = 0; (3)BVEBO: 3.5V min at IE = 10mA, IC = 0; (4)PO**: 1.7W typical at f = 1090MHz, VCE = 35.0V; (5)PG: 9.2dB typical at f = 1090MHz, VCE = 35.0V; (6)PO***: 1.5W min at f = 1025/1150MHz, VCE = 35.0V; (7)Pg: 8.75dB min at f = 1025/1150MHz, VCE = 35.0V; (8)PO***: 1.25W typical at f = 960/1215MHz, VCE = 35.0V; (9)Pg: 8.25dB typical at f = 960/1215MHz, VCE = 35.0V. ** pulse width 10s, duty cycle 1%. *** pulse width 10s, duty cycle 10%.




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