SD1527-08

The SD1527-08 is a gold metallized, silicon NPN power transistor. The feature of SD1527-08 are as follows: (1)designed for high power pulse IFF and TACAN; (2)5.0W IFF 1030-1090MHz; (3)4.0W TACAN 960-1215MHz; (4)greater than 9.5dB gain; (5)referactory ballasting and low thermal resistance for reliability and ruggedness; (6)infinite load-VSWR capability at specified operating conditions; (7)input matched, common base configuration.

The absolute maximum ratings of the SD1527-08 are: (1)collector-base voltage: 80V; (2)collector-emitter voltage: 80V; (3)emitter-base voltage: 3.5V; (4)collector current: 1.0A; (5)total power dissipation: 21.9W; (6)storage temperature: -65 to 150; (7)junction temperature:200.

The following is about the electrical characteristics of SD1527-08: (1)BVCES: 80V min at IC=10mA, VEB=0V; (2)BVCEO: 80V min at IC=25mA, IB=0; (3)BVEBO: 3.5V min at IE=10mA, IC=0; (4)ICBS: 1mA max at VCB=50V, IE=0; (5)PO: 5.0W typical at f=1090MHz, VCE=50V; (6)PG: 11.5dB typical at f=1090MHz, VCE=50V.