Features: ·DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS·200 WATTS (typ.) IFF 1030 - 1090 MHz·150 WATTS (min.) DME 1025 - 1150 MHz·140 WATTS (typ.) TACAN 960 - 1215 MHz·7.8 dB MIN. GAIN·REFRACTORY GOLD METALLIZATION·EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RU...
SD1538-02: Features: ·DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS·200 WATTS (typ.) IFF 1030 - 1090 MHz·150 WATTS (min.) DME 1025 - 1150 MHz·140 WATTS (typ.) TACAN 960 - 1215 MHz·7.8 dB MIN. GAI...
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| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 65 | V |
| VCES | Collector-Emitter Voltage | 65 | V |
| VEBO | Emitter-Base Voltage | 3.5 | V |
| IC | Device Current | 11.0 | A |
| PDISS | Power Dissipation | 583 | W |
| TJ | Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD1538-02 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1538-02 is packaged in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance.