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SD1541-09

Features: .DESIGNED FOR HIGH POWER PULSEDIFF APPLICATIONS.450 WATTS (min.) IFF 1030/1090 MHz .7.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION ·BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS ·30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS ·INPUT MATCHED, COMMON BA...

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SD1541-09: Features: .DESIGNED FOR HIGH POWER PULSEDIFF APPLICATIONS.450 WATTS (min.) IFF 1030/1090 MHz .7.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION ·BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY A...

SD1541-09 Data Sheet

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Part Number:
SD1541-09
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

.DESIGNED FOR HIGH POWER PULSED
 IFF APPLICATIONS
.450 WATTS (min.) IFF 1030/1090 MHz .7.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION  ·BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
·30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
·INPUT MATCHED, COMMON BASE CONFIGURATION


Specifications

Symbol Parameter
Value
Unit
VCBO Collector-Base Voltage
65
V
VCEO Collector-Emitter Voltage
65
V
VEBO Emitter-Base Voltage
3.5
V
IC Device Current
22
A
PDISS Power Dissipation
1458
W
TJ Junction Temperature
+200
TSTG Storage Temperature
65 to 150



Description

The SD1541-09 is a gold metallized silicon NPN planar transistor. The SD1541-09 is designedfor applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in a metal/ceramic package with internal input matching,resulting in improved broadband performance and a low thermal resistance.




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