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SD1542-04

Features: ·DESIGNED FOR HIGH POWER PULSED IFF ·600 WATTS (min.) IFF 1030/1090 MHz ·REFRACTORY GOLD METALLIZATION ·6.0 dB MIN. GAIN ·BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS ·30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS ·INPUT MATCHED, COMMON BASE CONFIGURA...

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SD1542-04: Features: ·DESIGNED FOR HIGH POWER PULSED IFF ·600 WATTS (min.) IFF 1030/1090 MHz ·REFRACTORY GOLD METALLIZATION ·6.0 dB MIN. GAIN ·BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNES...

SD1542-04 Data Sheet

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Part Number:
SD1542-04
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

·DESIGNED FOR HIGH POWER PULSED IFF
·600 WATTS (min.) IFF 1030/1090 MHz
·REFRACTORY GOLD METALLIZATION
·6.0 dB MIN. GAIN
·BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS
·30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
·INPUT MATCHED, COMMON BASE CONFIGURATION


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 40 A
PDISS Power Dissipation 1350 W
TJ Junction Temperature +200
TSTG Storage Temperature - 65 to +150



Description

The SD1542-04 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD1542- 04 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal reistance.




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