Features: .DESIGNED FOR HIGH POWER PULSEDIFF AND DME APPLICATIONS .600 WATTS (typ.) IFF 1030/1090 MHz .550 WATTS (min.) DME 1025 - 1150 MHz .5.6 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION·BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS·30:1 LOAD VSWR CAPABILITY AT.SPECIFIED O...
SD1542: Features: .DESIGNED FOR HIGH POWER PULSEDIFF AND DME APPLICATIONS .600 WATTS (typ.) IFF 1030/1090 MHz .550 WATTS (min.) DME 1025 - 1150 MHz .5.6 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION·BALLASTIN...
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| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
65 |
V |
| VCES | Collector-Emitter Voltage |
65 |
V |
| VEBO | Emitter-Base Voltage |
3.5 |
V |
| IC | Device Current |
40 |
A |
| PDISS | Power Dissipation |
1350 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 150 |
The SD1542 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD1542 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The SD1542 is packaged in a hermetic metal/ceramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance.