Features: .350 WATTS @ 10SEC PULSE WIDTH,10% DUTY CYCLE`300 WATTS @ 250SEC PULSE WIDTH,10% DUTY CYCLE .9.5 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION`EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS `INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONSSpecificatio...
SD1563: Features: .350 WATTS @ 10SEC PULSE WIDTH,10% DUTY CYCLE`300 WATTS @ 250SEC PULSE WIDTH,10% DUTY CYCLE .9.5 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION`EMITTER BALLASTING AND LOW THERMAL RESISTANCE FO...
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| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
65 |
V |
| VCES | Collector-Emitter Voltage |
65 |
V |
| VEBO | Emitter-Base Voltage |
3.5 |
V |
| IC | Device Current |
21.6 |
A |
| PDISS | Power Dissipation |
875 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 150 |
The SD1563 is a gold metallized silicon NPN pulse power transistor. The SD1563 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz.