Features: .500 WATTS @ 250Sec PULSE WIDTH,10% DUTY CYCLE .REFRACTORY GOLD METALLIZATION `EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS `INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS`INPUT MATCHED, COMMON BASE CONFIGURATION `BALANCED CONFIGURATIONSpecifications ...
SD1565: Features: .500 WATTS @ 250Sec PULSE WIDTH,10% DUTY CYCLE .REFRACTORY GOLD METALLIZATION `EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS `INFINITE VSWR CAPABILITY AT SPECIFIED O...
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| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
65 |
V |
| VCES | Collector-Emitter Voltage |
65 |
V |
| VEBO | Emitter-Base Voltage |
3.5 |
V |
| IC | Device Current |
43.5 |
A |
| PDISS | Power Dissipation |
1167 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 200 |
The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz.