Specifications Symbol Parameter Value Unit VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 28 V VEBO Emitter-BaseVoltage 4.0 V IC DeviceCurrent 10 A PDISS PowerDissipation(+25C) 175 W TJ JunctionTemperat...
SD1650: Specifications Symbol Parameter Value Unit VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 28 V VEBO Emitter-BaseVoltage 4.0 V I...
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|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-BaseVoltage |
60 |
V |
|
VCEO |
Collector-EmitterVoltage |
28 |
V |
|
VEBO |
Emitter-BaseVoltage |
4.0 |
V |
|
IC |
DeviceCurrent |
10 |
A |
|
PDISS |
PowerDissipation(+25C) |
175 |
W |
|
TJ |
JunctionTemperature |
+200 |
|
|
TSTG |
StorageTemperature |
-65 to+150 |
Designed for 900MHz cellular radio base station applications,the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching re-sult in terminal impedance levels easily handled by the circuit designer.