Features: OPTIMIZED FOR SSB 30 MHz .50 VOLTSIMD -30 dBCOMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MINWITH 14 dB GAINApplicationOPTIMIZED FOR SSB 30 MHz .50 VOLTS IMD -30 dBCOMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAINPinoutSpecifications Symbol Parameter V...
SD1726 (THA15): Features: OPTIMIZED FOR SSB 30 MHz .50 VOLTSIMD -30 dBCOMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MINWITH 14 dB GAINApplicationOPTIMIZED FOR SSB 30 MHz .50 VOLTS IMD -30 dBCOMMON EMITTER GOLD...
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OPTIMIZED FOR SSB
30 MHz .50 VOLTS
IMD -30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT = 150 W PEP MIN
WITH 14 dB GAIN
OPTIMIZED FOR SSB
30 MHz .50 VOLTS
IMD -30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT = 150 W PEP MIN. WITH 14 dB GAIN

| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 110 | V |
| VCEO | Collector-Emitter Voltage | 55 | V |
| VEBO | Emitter-Base Voltage | 4.0 | V |
| IC | Device Current | 10 | A |
| PDISS | Power Dissipation | 233 | W |
| IC | Junction Temperature | +200 | |
| TSTG | Storage Temperature | -65 to +150 |
The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.