SD1727

Maximum Operating Frequency :
Emitter- Base Voltage VEBO : 4 V
Configuration : Single Dual Emitter
Collector- Emitter Voltage VCEO Max : 55 V
Packaging : Bulk
Continuous Collector Current : 10 A
Power Dissipation : 233 W
Maximum DC Collector Current : 10 A
Package / Case : M164


Features:

.OPTIMIZED FOR SSB
.30 MHz .50 VOLTS
.IMD -30 dB
.COMMON EMITTER
.GOLD METALLIZATION
.POUT = 150 W PEP MIN
. WITH 14 dB GAIN

Pinout




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	110	V
VCEO	Collector-Emitter Voltage	55	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Device Current	10	A
PDISS	Power Dissipation	233	W
TJ	Junction Temperature	+200	°C
TSTG	Storage Temperature	- 65 to +150	°C

Description

The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.

Parameters:

Technical/Catalog Information	SD1727
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	10A
DC Current Gain (hFE) (Min) @ Ic, Vce	18 @ 1.4A, 6V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Gain	14dB
Power - Max	233W
Compression Point (P1dB)	-
Package / Case	M164
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD1727 SD1727 497 5459 ND 4975459ND 497-5459