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SD1729

Transistors RF Bipolar Power NPN 28V 30MHz

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SeekIC No. : 00218363 Detail

SD1729: Transistors RF Bipolar Power NPN 28V 30MHz

SD1729 Data Sheet

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Part Number:
SD1729
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Configuration : Single Maximum Operating Frequency : 30 MHz
Collector- Emitter Voltage VCEO Max : 35 V Emitter- Base Voltage VEBO : 4 V
Continuous Collector Current : 12 A Maximum DC Collector Current : 12 A
Power Dissipation : 175000 mW Package / Case : M174
Packaging : Bulk    

Description

Configuration : Single
Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V
Packaging : Bulk
Maximum Operating Frequency : 30 MHz
Maximum DC Collector Current : 12 A
Continuous Collector Current : 12 A
Package / Case : M174
Power Dissipation : 175000 mW


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 12 A
PDISS Power Dissipation 175 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.




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