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SD1730

Transistors RF Bipolar Power NPN 28V 30MHz

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SeekIC No. : 00218359 Detail

SD1730: Transistors RF Bipolar Power NPN 28V 30MHz

SD1730 Data Sheet

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Part Number:
SD1730
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V Continuous Collector Current : 16 A
Maximum DC Collector Current : 16 A Power Dissipation : 320000 mW
Package / Case : M174 Packaging : Bulk    

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V
Continuous Collector Current : 16 A
Configuration : Single Dual Emitter
Packaging : Bulk
Package / Case : M174
Maximum DC Collector Current : 16 A
Power Dissipation : 320000 mW


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 16 A
PDISS Power Dissipation 320 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability.




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