Features: · OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER . GOLD METALLIZATION·POUT = 250 W PEP WITH 12 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter...
SD1731-14: Features: · OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER . GOLD METALLIZATION·POUT = 250 W PEP WITH 12 dB GAINSpecifications Symbol Parameter Value Unit VCB...
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| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
110 |
V |
| VCEO | Collector-Emitter Voltage |
55 |
V |
| VEBO | Emitter-Base Voltage |
4.0 |
V |
| IC | Device Current |
20 |
A |
| PDISS | Power Dissipation (Theatsink25°C) |
257 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 150 |
The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.