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SD1731

Transistors RF Bipolar Power NPN 50V 30MHz

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SeekIC No. : 00218353 Detail

SD1731: Transistors RF Bipolar Power NPN 50V 30MHz

SD1731 Data Sheet

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Part Number:
SD1731
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 55 V
Emitter- Base Voltage VEBO : 4 V Continuous Collector Current : 20 A
Maximum DC Collector Current : 20 A Power Dissipation : 233 W
Package / Case : M174 Packaging : Bulk    

Description

Maximum Operating Frequency :
Emitter- Base Voltage VEBO : 4 V
Configuration : Single Dual Emitter
Collector- Emitter Voltage VCEO Max : 55 V
Packaging : Bulk
Continuous Collector Current : 20 A
Maximum DC Collector Current : 20 A
Power Dissipation : 233 W
Package / Case : M174


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 110 V
VCEO Collector-Emitter Voltage 55 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PDISS Power Dissipation (Theatsink25°C) 233 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1731 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications.This device utilizes emitter ballasting for improved ruggedness and reliability




Parameters:

Technical/Catalog InformationSD1731
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)20A
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10A, 6V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)55V
Gain13dB
Power - Max233W
Compression Point (P1dB)-
Package / CaseM174
PackagingTray
Drawing Number*
Mounting Type*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SD1731
SD1731
497 5461 ND
4975461ND
497-5461



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