Features: ·1·65 GHz ·28 VOLTS ·GOLD METALLIZED SYSTEM ·POLYSILICON SITE BALLASTING ·OVERLAY DIE GEOMETRY ·HIGH RELIABILITY AND RUGGEDNESS ·POUT = 5.0 W MIN· WITH 14.0 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage...
SD1891-03: Features: ·1·65 GHz ·28 VOLTS ·GOLD METALLIZED SYSTEM ·POLYSILICON SITE BALLASTING ·OVERLAY DIE GEOMETRY ·HIGH RELIABILITY AND RUGGEDNESS ·POUT = 5.0 W MIN· WITH 14.0 dB GAINSpecifications Symb...
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| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 45 | V |
| VCEO | Collector-Emitter Voltage | 15 | V |
| VEBO | Emitter-Base Voltage | 3.5 | V |
| IC | Device Current | 1.1 | A |
| PDISS | Power Dissipation | 8.8 | W |
| TJ | Junction Temperature | +200 | |
| TSTG | Storage Temperature | - 65 to +200 |
The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness.