DescriptionThe SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is 28.0V;(6)hermetic stripline package;(7)all gold metallized system;(8)polysilicon site ballasting;(9)...
SD1891: DescriptionThe SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is ...
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The SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is 28.0V;(6)hermetic stripline package;(7)all gold metallized system;(8)polysilicon site ballasting;(9)overlay die geometry;(9)high reliability and ruggendess;(10)common base operation.
The absolute maximum ratings of the SD1891 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 40,the unit is V;(2):the symbol is VCES,the parameter is collector-emitter voltage,the value is 15,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 1.1,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 8.8,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .
The electrical characteristics of the SD1891 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=1mA,the min is 30,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=1mA,the min is 3.5,the unit is V;(3):the symbol is ICBO,the test conditions is VCB=24V,the max is 0.5,the unit is mA;(4):the symbol is hFE,the test conditions is VCE=5V,IC=100mA,the min is 15,the max is 150.