SD1891

DescriptionThe SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is 28.0V;(6)hermetic stripline package;(7)all gold metallized system;(8)polysilicon site ballasting;(9)...

product image

SD1891 Picture
SeekIC No. : 004486417 Detail

SD1891: DescriptionThe SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is ...

floor Price/Ceiling Price

Part Number:
SD1891
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is 28.0V;(6)hermetic stripline package;(7)all gold metallized system;(8)polysilicon site ballasting;(9)overlay die geometry;(9)high reliability and ruggendess;(10)common base operation.

The absolute maximum ratings of the SD1891 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 40,the unit is V;(2):the symbol is VCES,the parameter is collector-emitter voltage,the value is 15,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 1.1,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 8.8,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1891 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=1mA,the min is 30,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=1mA,the min is 3.5,the unit is V;(3):the symbol is ICBO,the test conditions is VCB=24V,the max is 0.5,the unit is mA;(4):the symbol is hFE,the test conditions is VCE=5V,IC=100mA,the min is 15,the max is 150. 




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Discrete Semiconductor Products
Boxes, Enclosures, Racks
Undefined Category
RF and RFID
Connectors, Interconnects
View more