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SD1899

Features: .REFRACTORY/GOLD METALLIZATION .EFFICIENCY - 50% TYPICAL·POUT = 30 W MIN. WITH 9.3 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCES Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 3.0 V IC Devic...

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SD1899: Features: .REFRACTORY/GOLD METALLIZATION .EFFICIENCY - 50% TYPICAL·POUT = 30 W MIN. WITH 9.3 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V ...

SD1899 Data Sheet

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Part Number:
SD1899
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

.REFRACTORY/GOLD METALLIZATION
.EFFICIENCY - 50% TYPICAL
·POUT = 30 W MIN. WITH 9.3 dB GAIN


Specifications

Symbol Parameter
Value
Unit
VCBO Collector-Base Voltage
45
V
VCES Collector-Emitter Voltage
45
V
VEBO Emitter-Base Voltage
3.0
V
IC Device Current
3.5
A
PDISS Power Dissipation
64.8
W
TJ Junction Temperature
+200
TSTG Storage Temperature
65 to 150



Description

The SD1899 is a commonbase silicon NPNbipolar device optimized for 1.6 GHz SATCOM applications.

SD1899 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals.




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