SD217

The SD217 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)+/-7.5 V analog switch; (2)high speed, medium power, switch drivers; (3)sample and hold and track and hold; (4)A-to-D and D-to-A converters.

Features of the SD217 are:(1)CMOS compatible input; (2)small package, standard pin-output; (3)TTL and CMOS compatible input; (4)low capaciatnce;(5)peak pulsed current, 1 amp min.

The absolute maximum ratings of the SD217 can be summarized as:(1)drain source voltage: +25 V;(2)gate-source voltage: +/-22.5 V;(3)peak pulsed drain current: 1.0 A;(4)thermal resistance: 333 mW/ or 83 mW/;(5)operating junction and storage temperature range: -55 to +125 ;(6)lead temperature (1/16" from mounting surface for 30 sec): +260 . If you want to know more information about the SD217, please download the datasheet in www.seekic.com or www.chinaicmart.com .