MOSFET N-Ch 65 Volt 5 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5 A | ||
Configuration : | Single Dual Source | Maximum Operating Temperature : | + 200 C | ||
Package / Case : | Case M-113 | Packaging : | Bulk |
Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain Source Voltage | 65 | V |
VDGR | Drain-Gate Voltage (RGS = 1M) | 65 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Drain Current | 5 | A |
PDISS | Power Dissipation | 100 | W |
Tj | Max. Operating Junction Temperature | 200 | |
TSTG | Storage Temperature | -65 to 150 |
The SD2904 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz
Technical/Catalog Information | SD2904 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 65V |
Current Rating | 5A |
Package / Case | M113 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD2904 SD2904 497 5465 ND 4975465ND 497-5465 |