MOSFET N-Ch 125 Volt 6 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 125 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6 A | ||
Configuration : | Single Dual Source | Maximum Operating Temperature : | + 200 C | ||
Package / Case : | Case M-113 | Packaging : | Bulk |
Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain Source Voltage | 125 | V |
VDGR | Drain-Gate Voltage (RGS = 1M) | 125 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Drain Current | 6 | A |
PDISS | Power Dissipation | 175 | W |
Tj | Max. Operating Junction Temperature | 200 | |
TSTG | Storage Temperature | -65 to 150 |
Technical/Catalog Information | SD2918 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 125V |
Current Rating | 6A |
Package / Case | M113 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD2918 SD2918 497 5466 ND 4975466ND 497-5466 |