SD2921-10 Selling Leads, Price trend, SD2921-10 DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M) 125 V VGS Gate-Source Voltage ±20 V ID Drain Current 20 A PDISS Power Dissipation 389 W Tj Max. Operating Junction Temperature 200 ...

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SeekIC No. : 004486503 Detail

SD2921-10: PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M) 125 V VGS Gate-Source Voltage ±20 V ID Drain Cur...

SD2921-10 Data Sheet

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Part Number:: SD2921-10
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/26

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Product Details

Description

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	125	V
V_DGR	Drain-Gate Voltage (R_GS = 1M)	125	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	20	A
P_DISS	Power Dissipation	389	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to 150

Description

The SD2921-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2921 MOSFET, it is intended for use in 50V dc large signal applications up to 200 MHz.

The SD2921-10 is mechanical compatible to the SD2921 but it offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistor for ISM applications.

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SD2921-10

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