SD2922

PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M) 125 V VGS Gate-Source Voltage ±20 V ID Drain Current 40 A PDISS Power Dissipation 500 W Tj Max. Operating Junction Temperature +200 ...

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SD2922 Picture
SeekIC No. : 004486504 Detail

SD2922: PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M) 125 V VGS Gate-Source Voltage ±20 V ID Drain Cur...

floor Price/Ceiling Price

Part Number:
SD2922
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 125 V
VDGR Drain-Gate Voltage (RGS = 1M) 125 V
VGS Gate-Source Voltage ±20 V
ID Drain Current 40 A
PDISS Power Dissipation 500 W
Tj Max. Operating Junction Temperature +200
TSTG Storage Temperature -65 to 150



Description

The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD292 is intended for use in 50V dc large signal applications up to 200 MHz




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