PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M) 125 V VGS Gate-Source Voltage ±20 V ID Drain Current 40 A PDISS Power Dissipation 500 W Tj Max. Operating Junction Temperature +200 ...
SD2922: PinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 125 V VDGR Drain-Gate Voltage (RGS = 1M) 125 V VGS Gate-Source Voltage ±20 V ID Drain Cur...
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| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain Source Voltage | 125 | V |
| VDGR | Drain-Gate Voltage (RGS = 1M) | 125 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current | 40 | A |
| PDISS | Power Dissipation | 500 | W |
| Tj | Max. Operating Junction Temperature | +200 | |
| TSTG | Storage Temperature | -65 to 150 |
The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD292 is intended for use in 50V dc large signal applications up to 200 MHz