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Part Number: SD2923

 

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Description: The SD2923 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large...


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SD2923 General Description


The SD2923 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150 MHz

SD2923 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 125 V
VDGR Drain-Gate Voltage (RGS = 1M) 125 V
VGS Gate-Source Voltage ±20 V
ID Drain Current 40 A
PDISS Power Dissipation 648 W
Tj Max. Operating Junction Temperature 200
TSTG Storage Temperature -65 to 150

SD2923 Connection Diagram

SD2923  Connection Diagram

SD2923 datasheet

SD2923
PDF/DataSheet Download

  • Datasheet: SD2923
  • File Size: 109650 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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SD2923 Relative Products

  • SD2922

    SD2922

    The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD292 is intended for use in 50V dc large signal applications up to 200 MHz

  • SD2921-10

    SD2921-10

    The SD2921-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2921 MOSFET, it is intended for use in 50V dc large signal applications up to 200 MHz.The SD2921-10 is mechanical compatible to ...

  • SD2921

    SD2921

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  • SD2918

    SD2918

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  • SD2904

    SD2904

    The SD2904 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz

  • SD2903

    SD2903

    The SD2903 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz

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