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SD2931: Transistors RF MOSFET Power N-Ch 125 Volt 20A

SD2931 Data Sheet

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Part Number:: SD2931
Mfg:: STMicroelectronics
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/26

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Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	230 MHz	Gain :	15 dB at 175 MHz
Output Power :	150 W	Drain-Source Breakdown Voltage :	125 V
Continuous Drain Current :	20 A	Gate-Source Breakdown Voltage :	+/- 20 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	M174
Packaging :	Bulk

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 125 V
Gate-Source Breakdown Voltage : +/- 20 V
Output Power : 150 W
Packaging : Bulk
Continuous Drain Current : 20 A
Package / Case : M174
Frequency : 230 MHz
Gain : 15 dB at 175 MHz

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	125	V
V_DGR	Drain-Gate Voltage (R_GS = 1M)	125	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	16	A
P_DISS	Power Dissipation	292	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to 150

Description

The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD293 1 is intended for use in 50V dc large signal applications up to 230 MHz

Parameters:

Technical/Catalog Information	SD2931
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	125V
Current Rating	20A
Package / Case	M244
Packaging	Tray
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD2931 SD2931

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SD2931

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