Transistors RF Bipolar Power RF Transistor
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| Packaging : | Tray |

| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain Source Voltage | 125 | V |
| VDGR | Drain-Gate Voltage (RGS = 1M) | 125 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current | 40 | A |
| PDISS | Power Dissipation | 500 | W |
| Tj | Max. Operating Junction Temperature | 200 | |
| TSTG | Storage Temperature | -65 to 150 |
The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD293 2 is intended for use in 50V dc large signal applications up to 250 MHz
| Technical/Catalog Information | SD2932 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 125V |
| Current Rating | 40A |
| Package / Case | M244 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SD2932 SD2932 497 5468 ND 4975468ND 497-5468 |