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SD4010

Application470-860 MHz26.5 VOLTSGOLD METALLIZATIONPOUT = 20.0W MIN. WITH 9.5 dB GAININTERNAL INPUT MATCHINGDIFFUSED EMITTER BALLAST RESISTORSPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 60.0 V VCES Collector-Emitter Voltage 60.0 V VEBO Emitte...

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SeekIC No. : 004486572 Detail

SD4010: Application470-860 MHz26.5 VOLTSGOLD METALLIZATIONPOUT = 20.0W MIN. WITH 9.5 dB GAININTERNAL INPUT MATCHINGDIFFUSED EMITTER BALLAST RESISTORSPinoutSpecifications Symbol Parameter Value Unit ...

SD4010 Data Sheet

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Part Number:
SD4010
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Application

470-860 MHz
26.5 VOLTS
GOLD METALLIZATION
POUT = 20.0W MIN. WITH 9.5 dB GAIN
INTERNAL INPUT MATCHING
DIFFUSED EMITTER BALLAST RESISTORS


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60.0 V
VCES Collector-Emitter Voltage 60.0 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current (Maximum) 11.0 A
PDISS Power Dissipation 88.8 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD4010 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors. The SD 4010 is intended for use in linear applications up to 1GHz, including UHF television transmitters, transposers and cellular base stations.




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