Transistors RF Bipolar Power 800-960MHz Power
SD4590: Transistors RF Bipolar Power 800-960MHz Power
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| Configuration : | Single | Maximum Operating Frequency : | 960 MHz |
| Collector- Emitter Voltage VCEO Max : | 28 V | Emitter- Base Voltage VEBO : | 3.5 V |
| Continuous Collector Current : | 25 A | Maximum DC Collector Current : | 25 A |
| Power Dissipation : | 300 W | Package / Case : | M208 |
| Packaging : | Bulk |

| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 65 | V |
| VCEO | Collector-Emitter Voltage | 28 | V |
| VEBO | Emitter-Base Voltage | 3.5 | V |
| IC | Device Current | 25 | A |
| PDISS | Power Dissipation | 300 | W |
| TJ | Max. Operating Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output of SD4590 pre-matching simplifies amplifier design. Ruggedness, MTTF, and linearity are enhanced using diffused emitter resistors and refractory/gold metallization.